Magnetoelectric Response of Antiferromagnetic CrI₃ Bilayers

We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI$_3$, have a strong magnetoelectric response can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and dual-gate geometries allow internal electric fields carrier densities to varied independently. comment on reliability density-functional-theory estimates interlayer magnetic interactions bilayers, sensitivity pressure alters spatial separation between layers.